page . 1 april 30,2010-rev.00 SB1040LCT dual low vf schottky rectifier voltage 40 volts 10 amperes features ? low forward voltage drop, low power losses ? high efficiency operation ? in compliance with eu rohs 2002/95/ec directives mechanical data case : to-220ab, plastic terminals : solderable per mil-std-750, method 2026 weight: 0.065 ounces, 1.859 grams current maximum ratings(t a =25 o c unless otherwise noted) electrical characteristics(t a =25 o c unless otherwise noted) note.1.pulse test : 300 s pulse width, 1% duty cycle 2.pulse test : pulse width < 40ms .058(1.47) .042(1.07) parameter symbol value unit maximum repetitive peak reverse voltage v rrm 40 v maximum average forward rectified current (fig.1) per device per diode i f(av) 10 5 a peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode per diode i fsm 125 a typical thermal resistance r jc 2.5 o c / w operating junction t j -55 to + 125 o c storage temperature range t stg -55 to + 150 o c parameter symbol test conditions min. typ. max. unit breakdown voltage v br i r =1ma 47 - - v instantaneous forward voltage per diode (1) v f i f =2.5a i f =5a t j =25 o c - - 0.38 0.41 - 0.44 v i f =2.5a i f =5a t j =125 o c - - 0.27 0.32 - 0.35 v reverse current per diode (2) i r v r =40v t j =25 o c t j =100 o c - - 185 - 500 30 a ma
page . 2 may 4,2010-rev.00 SB1040LCT fig.1 typical forward characteristics 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v f , forward voltage (v) i f , forward current (a) t j = 75c t j = 25c t j = 125c t j = 100c 10 100 1000 10000 0.1 1 10 100 v r , reverse bias voltage (v) c j , junction capacitance (pf) 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0 25 50 75 100 125 150 t c , case temperature (c) i f , average forward current (a) 0.01 0.1 1 10 100 20 40 60 80 100 percent of rated peak reverse voltage (%) i r , leakage current (ma) 100c 25c fig.3 typical junction capacitance fig.4 forward current derating curve fig.2 typical reverse characteristics per diode per diode per diode per diode
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